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FDD8770

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FDD8770 Image

The FDD8770 from onsemi is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 4 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 V. Tags: Surface Mount. More details for FDD8770 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD8770
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    4 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    29 to 73 nC
  • Power Dissipation
    115 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC-DC for dekstop

Technical Documents
View details on the manufacturer's website
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