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FDG8842CZ

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FDG8842CZ Image

The FDG8842CZ from onsemi is a MOSFET with Continous Drain Current -0.41 to 0.75 A, Drain Source Resistance 250 to 1900 milliohm, Drain Source Breakdown Voltage -25 to 25 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for FDG8842CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDG8842CZ
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.41 to 0.75 A
  • Drain Source Resistance
    250 to 1900 milliohm
  • Drain Source Breakdown Voltage
    -25 to 25 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    1.03 to 1.68 nC
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88-6 / SC-70-6 / SOT-363-6

Technical Documents
View details on the manufacturer's website
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