FDMC4435BZ-F127

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The FDMC4435BZ-F127 from onsemi is a MOSFET with Continous Drain Current -18 A, Drain Source Resistance 14 to 37 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for FDMC4435BZ-F127 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC4435BZ-F127
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18 A
  • Drain Source Resistance
    14 to 37 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    20 to 53 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    High Side in DC - DC Buck Converters, Notebook Battery Power Management, Load Switch in Notebook

Technical Documents

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