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DMN3055LFDBQ

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DMN3055LFDBQ Image

The DMN3055LFDBQ from Diodes Incorporated is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 32 to 75 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for DMN3055LFDBQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3055LFDBQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    32 to 75 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    11.2 nC
  • Power Dissipation
    1.36 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Battery Charging, Power Management Functions, DC-DC Converters, Portable Power Adaptors

Technical Documents
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