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FDMC86116LZ

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FDMC86116LZ Image

The FDMC86116LZ from onsemi is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 103 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 V. Tags: Surface Mount. More details for FDMC86116LZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC86116LZ
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    103 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    2 to 6 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    DC-DC conversion

Technical Documents
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