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FDME820NZT

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FDME820NZT Image

The FDME820NZT from onsemi is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 18 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for FDME820NZT can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDME820NZT
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    18 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1 V
  • Gate Charge
    8 to 8.5 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Li-lon Battery Pack, Baseband Switch, Load Switch, DC-DC Conversion

Technical Documents
View details on the manufacturer's website
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