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FDMS3660S

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FDMS3660S Image

The FDMS3660S from onsemi is a MOSFET with Continous Drain Current 13 to 30 A, Drain Source Resistance 1.8 to 8 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 to 2.7 V. Tags: Surface Mount. More details for FDMS3660S can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMS3660S
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 to 30 A
  • Drain Source Resistance
    1.8 to 8 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 to 2.7 V
  • Gate Charge
    9.5 to 87 nC
  • Power Dissipation
    2.2 to 2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Computing, Communications, General Purpose Point of Load, Notebook VCORE

Technical Documents
View details on the manufacturer's website
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