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FDN357N

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FDN357N Image

The FDN357N from onsemi is a MOSFET with Continous Drain Current 1.9 A, Drain Source Resistance 60 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 V. Tags: Surface Mount. More details for FDN357N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN357N
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.9 A
  • Drain Source Resistance
    60 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    3 to 8 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3

Technical Documents
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