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FDS8884

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FDS8884 Image

The FDS8884 from onsemi is a MOSFET with Continous Drain Current 8.5 A, Drain Source Resistance 23 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 V. Tags: Surface Mount. More details for FDS8884 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS8884
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.5 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    5 to 13 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents
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