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FDS8935

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FDS8935 Image

The FDS8935 from onsemi is a MOSFET with Continous Drain Current -2.1 A, Drain Source Resistance 183 milliohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDS8935 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS8935
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 3.1 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.1 A
  • Drain Source Resistance
    183 milliohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    7 to 19 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Synchronous rectifier, Load switch

Technical Documents
View details on the manufacturer's website
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