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FDT3612

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FDT3612 Image

The FDT3612 from onsemi is a MOSFET with Continous Drain Current 3.7 A, Drain Source Resistance 120 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDT3612 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDT3612
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 3 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.7 A
  • Drain Source Resistance
    120 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    14 to 20 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223-4 / TO-261-4
  • Applications
    DC/DC converter, Motor driving

Technical Documents
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