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FDU5N60NZTU

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FDU5N60NZTU Image

The FDU5N60NZTU from onsemi is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FDU5N60NZTU can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDU5N60NZTU
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, 83 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    10 to 13 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    IPAK-3 / DPAK-3 STRAIGHT LEAD
  • Applications
    LCD / LED TV, Lighting, Charger / Adapter

Technical Documents
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