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FDV304P

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FDV304P Image

The FDV304P from onsemi is a MOSFET with Continous Drain Current -0.46 A, Drain Source Resistance 870 to 2000 milliohm, Drain Source Breakdown Voltage -25 V, Gate Source Voltage -8 V, Gate Source Threshold Voltage -1.5 to -0.65 V. Tags: Surface Mount. More details for FDV304P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDV304P
  • Manufacturer
    onsemi
  • Description
    -25 V, 1.1 to 1.5 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.46 A
  • Drain Source Resistance
    870 to 2000 milliohm
  • Drain Source Breakdown Voltage
    -25 V
  • Gate Source Voltage
    -8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.65 V
  • Gate Charge
    1.1 to 1.5 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23-3

Technical Documents
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