FDY4000CZ

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FDY4000CZ Image

The FDY4000CZ from onsemi is a MOSFET with Continous Drain Current -0.35 to 0.6 A, Drain Source Resistance 300 to 2700 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for FDY4000CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDY4000CZ
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 0.8 to 1.4 nC, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.35 to 0.6 A
  • Drain Source Resistance
    300 to 2700 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    0.8 to 1.4 nC
  • Power Dissipation
    0.625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Lavel shifting, Power supply conveter Circuits, Load power switching cell phones

Technical Documents

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