FQD16N25C

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FQD16N25C Image

The FQD16N25C from onsemi is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 220 to 270 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD16N25C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD16N25C
  • Manufacturer
    onsemi
  • Description
    250 V, 41 to 53.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 A
  • Drain Source Resistance
    220 to 270 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    41 to 53.5 nC
  • Power Dissipation
    160 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents

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