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FQN1N50C

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FQN1N50C Image

The FQN1N50C from onsemi is a MOSFET with Continous Drain Current 0.38 A, Drain Source Resistance 4600 to 6000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQN1N50C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQN1N50C
  • Manufacturer
    onsemi
  • Description
    500 V, 4.9 to 6.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.38 A
  • Drain Source Resistance
    4600 to 6000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.9 to 6.4 nC
  • Power Dissipation
    2.08 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
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