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FQI7N80

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FQI7N80 Image

The FQI7N80 from onsemi is a MOSFET with Continous Drain Current 6.6 A, Drain Source Resistance 1200 to 1500 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQI7N80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQI7N80
  • Manufacturer
    onsemi
  • Description
    800 V, 40 to 52 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.6 A
  • Drain Source Resistance
    1200 to 1500 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    40 to 52 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    I2PAK

Technical Documents
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