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FQAF11N90C

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FQAF11N90C Image

The FQAF11N90C from onsemi is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 910 to 1100 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQAF11N90C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQAF11N90C
  • Manufacturer
    onsemi
  • Description
    900 V, 60 to 80 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    910 to 1100 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    60 to 80 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-3PF-3L

Technical Documents
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