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FQB44N10TM

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The FQB44N10TM from onsemi is a MOSFET with Continous Drain Current 43.5 A, Drain Source Resistance 30 to 39 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQB44N10TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB44N10TM
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43.5 A
  • Drain Source Resistance
    30 to 39 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    48 to 62 nC
  • Power Dissipation
    146 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2-PAK

Technical Documents
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