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FQB4N80TM

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The FQB4N80TM from onsemi is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 2800 to 3600 milli-ohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FQB4N80TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB4N80TM
  • Manufacturer
    onsemi
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    2800 to 3600 milli-ohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    19 to 25 nC
  • Power Dissipation
    130 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2-PAK

Technical Documents
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