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Si4160DY

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The Si4160DY from Vishay is a MOSFET with Continous Drain Current 25.4 A, Drain Source Resistance 4 to 6.3 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Surface Mount. More details for Si4160DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4160DY
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25.4 A
  • Drain Source Resistance
    4 to 6.3 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.4 V
  • Gate Charge
    36 nC
  • Power Dissipation
    5.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Notebook - Vcore low side - DC/DC

Technical Documents
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