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FQD2N60CTM

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The FQD2N60CTM from onsemi is a MOSFET with Continous Drain Current 1.9 A, Drain Source Resistance 3600 to 4700 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD2N60CTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD2N60CTM
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.9 A
  • Drain Source Resistance
    3600 to 4700 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.5 to 12 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK3 (TO-252 3 LD)
  • Applications
    Lighting

Technical Documents
View details on the manufacturer's website
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