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FQD3N60CTM-WS

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FQD3N60CTM-WS Image

The FQD3N60CTM-WS from onsemi is a MOSFET with Continous Drain Current 2.4 A, Drain Source Resistance 2800 to 3400 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD3N60CTM-WS can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD3N60CTM-WS
  • Manufacturer
    onsemi
  • Description
    600 V, 10.5 to 14 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 A
  • Drain Source Resistance
    2800 to 3400 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    10.5 to 14 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents
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