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FQD6N40CTM

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The FQD6N40CTM from onsemi is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 830 to 1000 milli-ohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD6N40CTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD6N40CTM
  • Manufacturer
    onsemi
  • Description
    400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    830 to 1000 milli-ohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 to 20 nC
  • Power Dissipation
    48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    LED TV, Lighting

Technical Documents
View details on the manufacturer's website
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