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FQD7N30

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FQD7N30 Image

The FQD7N30 from onsemi is a MOSFET with Continous Drain Current 5.5 A, Drain Source Resistance 530 to 700 milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FQD7N30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD7N30
  • Manufacturer
    onsemi
  • Description
    300 V, 13 to 17 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 A
  • Drain Source Resistance
    530 to 700 milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    13 to 17 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents
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