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FQD8P10TM

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The FQD8P10TM from onsemi is a MOSFET with Continous Drain Current -6.6 A, Drain Source Resistance 410 to 530 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for FQD8P10TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD8P10TM
  • Manufacturer
    onsemi
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.6 A
  • Drain Source Resistance
    410 to 530 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    12 to 15 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    LCD TV, LED TV, PDP TV

Technical Documents
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