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FQT4N20L

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The FQT4N20L from onsemi is a MOSFET with Continous Drain Current 0.85 A, Drain Source Resistance 1100 to 1400 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for FQT4N20L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQT4N20L
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.85 A
  • Drain Source Resistance
    1100 to 1400 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    4 to 5.2 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223

Technical Documents
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