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NDS352AP

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The NDS352AP from onsemi is a MOSFET with Continous Drain Current -0.9 to 0.9 A, Drain Source Resistance 300 to 700 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -0.5 V. Tags: Surface Mount. More details for NDS352AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDS352AP
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.9 to 0.9 A
  • Drain Source Resistance
    300 to 700 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -0.5 V
  • Gate Charge
    2 to 3 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    General Purpose applications

Technical Documents
View details on the manufacturer's website
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