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NTBG060N090SC1

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NTBG060N090SC1 Image

The NTBG060N090SC1 from onsemi is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 43 to 135 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage 22 V, Gate Source Threshold Voltage 1.8 to 4.3 V. Tags: Through Hole. More details for NTBG060N090SC1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBG060N090SC1
  • Manufacturer
    onsemi
  • Description
    22 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    43 to 135 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    22 V
  • Gate Source Threshold Voltage
    1.8 to 4.3 V
  • Gate Charge
    88 nC
  • Power Dissipation
    3.6 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    D2PAK-7L
  • Applications
    UPS, DC/DC Converter, Boost Inverter

Technical Documents
View details on the manufacturer's website
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