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NTBGS1D5N06C

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The NTBGS1D5N06C from onsemi is a MOSFET with Continous Drain Current 267 A, Drain Source Resistance 1.23 to 1.62 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTBGS1D5N06C can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBGS1D5N06C
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    267 A
  • Drain Source Resistance
    1.23 to 1.62 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    78.6 nC
  • Power Dissipation
    211 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-7L
  • Applications
    Power Tools, Battery Operated Vacuums, UAV/Drones, Material Handling, BMS/Storage, Home Automation

Technical Documents
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