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NTBLS1D7N10MCTXG

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The NTBLS1D7N10MCTXG from onsemi is a MOSFET with Continous Drain Current 272 A, Drain Source Resistance 1500 to 1800 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTBLS1D7N10MCTXG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBLS1D7N10MCTXG
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    272 A
  • Drain Source Resistance
    1500 to 1800 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    115 nC
  • Power Dissipation
    295 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    H-PSOF8L
  • Applications
    Primary and Secondary Side DC-DC, High Efficiency AC-DC Conversion, Pont of Load, Solar Inverter, Motor Drive, Hot Swap, Oring

Technical Documents
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