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NTBS2D7N06M7

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The NTBS2D7N06M7 from onsemi is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 2.2 to 5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTBS2D7N06M7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBS2D7N06M7
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    2.2 to 5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    80 to 110 nC
  • Power Dissipation
    176 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3(TO-263)
  • Applications
    Industrial Motor Drive, Industrial Power Supply, Industrial Automation, Battery Operated Tools, Battery Protection, Solar Inverters, UPS and Energy Inverters, Energy Storage, Load Switch

Technical Documents
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