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NTD6416ANLT4G

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The NTD6416ANLT4G from onsemi is a MOSFET with Continous Drain Current 19 A, Drain Source Resistance 62 to 80 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for NTD6416ANLT4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTD6416ANLT4G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 A
  • Drain Source Resistance
    62 to 80 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    25 to 40 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Motor Control, UPS Inverter

Technical Documents
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