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NTH4L028N170M1

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The NTH4L028N170M1 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -15 to 25 V, Gate Source Threshold Voltage 4.3 V. Tags: Through Hole. More details for NTH4L028N170M1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTH4L028N170M1
  • Manufacturer
    onsemi
  • Description
    1700 V SiC MOSFET for UPS

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    57 A
  • Drain Source Resistance
    40 milliohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -15 to 25 V
  • Gate Source Threshold Voltage
    4.3 V
  • Gate Charge
    200 nC
  • Power Dissipation
    267 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-4L
  • Applications
    UPS, DC/DC Converter, Boost Converter

Technical Documents
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