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NTHD3100CT3G

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The NTHD3100CT3G from onsemi is a MOSFET with Continous Drain Current -4.4 to 3.9 A, Drain Source Resistance 58 to 110 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.2 V. Tags: Surface Mount. More details for NTHD3100CT3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD3100CT3G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.4 to 3.9 A
  • Drain Source Resistance
    58 to 110 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.2 V
  • Gate Charge
    2.3 to 7.4 nC
  • Power Dissipation
    1.1 to 3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET
  • Applications
    DC-DC Conversion Circuits, Load Switch Applications Requiring Level Shift, Drive Small Brushless DC Motors, Ideal for Power Management Applications in Portable, Battery Powered Products

Technical Documents
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