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NTHD3102CT1G

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The NTHD3102CT1G from onsemi is a MOSFET with Continous Drain Current -4.2 to 5.5 A, Drain Source Resistance 29 to 150 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.2 to 1.2 V. Tags: Surface Mount. More details for NTHD3102CT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD3102CT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.2 to 5.5 A
  • Drain Source Resistance
    29 to 150 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.2 to 1.2 V
  • Gate Charge
    5.8 to 8.9 nC
  • Power Dissipation
    1.1 to 2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET
  • Applications
    DC-DC Conversion Circuits, Load/Power Switching, Single or Dual Cell Li-Ion Battery Supplied Devices, Ideal for Power Management Applications in Portable, Battery Powered Products

Technical Documents
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