1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTHD4P02FT1G

NTHD4P02FT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTHD4P02FT1G from onsemi is a MOSFET with Continous Drain Current -3 A, Drain Source Resistance 130 to 240 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.6 V. Tags: Surface Mount. More details for NTHD4P02FT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTHD4P02FT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 A
  • Drain Source Resistance
    130 to 240 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.6 V
  • Gate Charge
    3 to 6 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Li-Ion Battery Charging, High Side DC-DC Conversion Circuits, High Side Drive for Small Brushless DC Motors, Power Management in Portable, Battery Powered Products

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products