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NTHS5404T1G

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The NTHS5404T1G from onsemi is a MOSFET with Continous Drain Current 7.2 A, Drain Source Resistance 25 to 45 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 V. Tags: Surface Mount. More details for NTHS5404T1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHS5404T1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 12 to 18 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.2 A
  • Drain Source Resistance
    25 to 45 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 V
  • Gate Charge
    12 to 18 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Chip
  • Applications
    Power Management in Portable and Battery-Powered Products i.e., Cellular and Cordless Telephones and PCMCIA Cards

Technical Documents
View details on the manufacturer's website
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