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NTJD4105CT1

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The NTJD4105CT1 from onsemi is a MOSFET with Continous Drain Current -0.775 to 0.91 A, Drain Source Resistance 290 to 900 milliohm, Drain Source Breakdown Voltage -8 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to 1.5 V. Tags: Surface Mount. More details for NTJD4105CT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTJD4105CT1
  • Manufacturer
    onsemi
  • Description
    -8 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.775 to 0.91 A
  • Drain Source Resistance
    290 to 900 milliohm
  • Drain Source Breakdown Voltage
    -8 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to 1.5 V
  • Gate Charge
    1.3 to 4 nC
  • Power Dissipation
    0.14 to 0.55 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    DC-DC Conversion, Load/Power Switching, Single or Dual Cell Li-Ion Battery Supplied Devices, Cell Phones, MP3s, Digital Cameras, PDAs

Technical Documents
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