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NTLJD3115PTAG

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The NTLJD3115PTAG from onsemi is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 75 to 200 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTLJD3115PTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJD3115PTAG
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    75 to 200 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    5.5 to 6.2 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    Optimized for Battery and Load Management Applications in Portable Equipment, Li-Ion Battery Charging and Protection Circuits, High Side Load Switch

Technical Documents
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