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NTLJS17D0P03P8ZTAG

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The NTLJS17D0P03P8ZTAG from onsemi is a MOSFET with Continous Drain Current -11.7 A, Drain Source Resistance 8.6 to 21.3 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NTLJS17D0P03P8ZTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS17D0P03P8ZTAG
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11.7 A
  • Drain Source Resistance
    8.6 to 21.3 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    23 to 38 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-6
  • Applications
    Battery Management, Protection, Power Load Switch

Technical Documents
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