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NTLUS3A18PZTBG

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The NTLUS3A18PZTBG from onsemi is a MOSFET with Continous Drain Current -12.2 A, Drain Source Resistance 14.6 to 90 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTLUS3A18PZTBG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLUS3A18PZTBG
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12.2 A
  • Drain Source Resistance
    14.6 to 90 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    28 nC
  • Power Dissipation
    3.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Optimized for Power Management Applications for Portable Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others, Battery Switch, High Side Load Switch

Technical Documents
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