NTMFS0D6N04XMT1G

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The NTMFS0D6N04XMT1G from onsemi is an N-channel MOSFET that is ideal for motor drive, battery protection, and ORing applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 0.57 milli-ohms. This MOSFET has a continuous drain current of up to 380 A and a power dissipation of less than 150 W. It features low drain-to-source resistance to minimize conduction losses and low capacitance to reduce driver losses. This RoHS-compliant MOSFET is available in a surface-mount package that measures 5.15 x 6.30 mm.

Product Specifications

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Product Details

  • Part Number
    NTMFS0D6N04XMT1G
  • Manufacturer
    onsemi
  • Description
    40 V N-channel MOSFET for Battery Protection Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.15 x 6.30 mm
  • Number of Channels
    Single
  • Continous Drain Current
    380 A
  • Drain Source Resistance
    0.57 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    86.4 nC
  • Switching Speed
    15.6 to 58.2 ns
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    Motor Drive, Battery Protection, Oring

Technical Documents

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