The NTMFS0D6N04XMT1G from onsemi is an N-channel MOSFET that is ideal for motor drive, battery protection, and ORing applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 0.57 milli-ohms. This MOSFET has a continuous drain current of up to 380 A and a power dissipation of less than 150 W. It features low drain-to-source resistance to minimize conduction losses and low capacitance to reduce driver losses. This RoHS-compliant MOSFET is available in a surface-mount package that measures 5.15 x 6.30 mm.