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NTMFS3D2N10MDT1G

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The NTMFS3D2N10MDT1G from onsemi is a MOSFET with Continous Drain Current 19 to 142 A, Drain Source Resistance 2.9 to 5.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTMFS3D2N10MDT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS3D2N10MDT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 29 to 48 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 142 A
  • Drain Source Resistance
    2.9 to 5.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    29 to 48 nC
  • Power Dissipation
    155 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5 (SO-8FL)
  • Applications
    Primary Switch in Isolated DC-DC Converter, Synchronous Rectification (SR) in DC-DC and AC-DC, AC-DC Adapters (USB PD) SR, Load Switch, Hotswap, and ORing Switch, BLDC Motor and Solar Inverter

Technical Documents
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