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NTMFS4C35NT3G

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The NTMFS4C35NT3G from onsemi is a MOSFET with Continous Drain Current 9.3 to 80 A, Drain Source Resistance 2.56 to 4 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for NTMFS4C35NT3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS4C35NT3G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 15 to 32.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.3 to 80 A
  • Drain Source Resistance
    2.56 to 4 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    15 to 32.5 nC
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8FL
  • Applications
    CPU Power Delivery, DC-DC Converters

Technical Documents
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