1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTMFS6H818NLT1G

NTMFS6H818NLT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

NTMFS6H818NLT1G Image

The NTMFS6H818NLT1G from onsemi is a MOSFET with Continous Drain Current 135 A, Drain Source Resistance 2.7 to 4.1 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMFS6H818NLT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMFS6H818NLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 64 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    135 A
  • Drain Source Resistance
    2.7 to 4.1 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    64 nC
  • Power Dissipation
    140 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5 (SO-8FL)
  • Applications
    Synchronous rectification, Motor switch, Load Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products