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IRF640S

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IRF640S Image

The IRF640S from Vishay is a MOSFET with Continous Drain Current 11 to 18 A, Drain Source Resistance 0.18 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRF640S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF640S
  • Manufacturer
    Vishay
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 18 A
  • Drain Source Resistance
    0.18 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 nC
  • Power Dissipation
    130 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK, TO-263

Technical Documents
View details on the manufacturer's website
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