1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTMYS008N08LHTWG

NTMYS008N08LHTWG

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

NTMYS008N08LHTWG Image

The NTMYS008N08LHTWG from onsemi is a MOSFET with Continous Drain Current 59 A, Drain Source Resistance 7.2 to 11 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMYS008N08LHTWG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMYS008N08LHTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 12 to 25 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    59 A
  • Drain Source Resistance
    7.2 to 11 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    12 to 25 nC
  • Power Dissipation
    73 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4
  • Applications
    MV Synchronous Rectifier Mosfet, Motor Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products