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NTMJS1D3N04CTWG

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NTMJS1D3N04CTWG Image

The NTMJS1D3N04CTWG from onsemi is a MOSFET with Continous Drain Current 235 A, Drain Source Resistance 1.1 to 1.3 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for NTMJS1D3N04CTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMJS1D3N04CTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 65 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    235 A
  • Drain Source Resistance
    1.1 to 1.3 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    65 nC
  • Power Dissipation
    128 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8

Technical Documents
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