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NTP360N80S3Z

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NTP360N80S3Z Image

The NTP360N80S3Z from onsemi is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 300 to 360 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Through Hole. More details for NTP360N80S3Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTP360N80S3Z
  • Manufacturer
    onsemi
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    300 to 360 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    25.3 nC
  • Power Dissipation
    96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Adapters / Chargers, LED Lighting, AUX Power, Audio, Industrial Power

Technical Documents
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